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LS843-5 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
LS843 LS844 LS845
ULTRA LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
ULTRA LOW NOISE
LOW LEAKAGE
LOW DRIFT
ULTRA LOW OFFSET VOLTAGE
en= 3nV/√Hz TYP.
IG = 15pA TYPs.
|∆VGS1-2 /∆T|= 5µV/°C max.
IVGS1-2I= 1mV max.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
-VDSO
-IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
60V
60V
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125°C
D1
G1 3
5 S2
S1
D1 2
6 D2
G1
G2
1
7
S2
S1
G2
D2
31 X 32 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS843 LS844 LS845 UNITS
|∆VGS1-2 /∆T| max. Drift vs. Temperature
5
10
25 µV/°C
|VGS1-2| max.
Offset Voltage
1
5
15 mV
CONDITIONS
VDG= 10V
TA= -55°C to +125°C
VDG= 10V
ID= 500µA
ID= 500µA
SYMBOL
BVGSS
BVGGO
Yfss
Yfs
|Yfs1-2/Yfs|
IDSS
|IDSS1-2/IDSS|
VGS(off) or VP
VGS
-IG
-IG
-IG
-IGSS
CHARACTERISTICS
MIN.
Breakdown Voltage
60
Gate-to-Gate Breakdown
60
TRANSCONDUCTANCE
Full Conduction
1500
Typical Conduction
1000
Mismatch
--
DRAIN CURRENT
Full Conduction
1.5
Mismatch at Full Conduction --
GATE VOLTAGE
Pinchoff Voltage
1
Operating Range
0.5
GATE CURRENT
Operating
--
High Temperature
--
Reduced VDG
--
At Full Conduction
--
TYP.
--
--
MAX.
--
--
UNITS
V
V
--
--
1500 --
0.6
3
µmho
µmho
%
5
15
mA
1
5
%
--
3.5
V
--
3.5
V
15
50
pA
--
50
nA
5
30
pA
--
100 pA
CONDITIONS
VDS= 0
IG= 1nA
ID= 1nA
ID= 0
VDG= 15V VGS= 0
VDG= 15V ID= 500µA
VDG= 15V VGS= 0
VDS= 15V ID= 1nA
VDS= 15V ID= 500µA
VDG= 15V
VDG= 15V
VDG= 3V
VDG= 15V
ID= 500µA
ID= 500µA
ID= 500µA
VDS= 0
IS= 0
f= 1kHz
TA= +125°C
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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