LS830_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

LS830 LS831 LS832 LS833
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
FEATURES
ULTRA LOW DRIFT
│ΔVGS1-2/ΔT│= 5µV/ºC max.
ULTRA LOW NOISE
LOW NOISE
IG=80fA TYP.
en=70nV/√Hz TYP.
LOW CAPACITANCE
CISS=3pf max.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
Gate Voltage to Drain or Source
-VDSO
Drain to Source Voltage
-IG(f)
Gate Forward Current
-IG
Gate Reverse Current
Maximum Power Dissipation @ TA = 25ºC
40V
40V
10mA
10µA
Continuous Power Dissipation (Total)
500mW
Top View
SOIC
Top View
TO-71 & TO-78
SYMBOL
BVGSS
BVGGO
gfss
gfs
│gfs1-2/gfs│
IDSS
│IDSS1-2/IDSS│
CHARACTERISTIC
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Differential
DRAIN CURRENT
Full Conduction
Differential at Full Conduction
MIN.
-40
±40
TYP.
-60
--
MAX. UNITS
--
V
--
V
CONDITIONS
VDS= 0
IG= -1nA
IG= ±1µA
ID= 0
IS = 0
70 300 500 µS VDG= 10V
50 100 200 µS VDG= 10V
--
1
5
%
VGS= 0 f = 1kHz
ID= 30µA f = 1kHz
60 400 1000 µA
VDG= 10V
--
2
5
%
VGS= 0
ELECTRICAL CHARACTERISTICS TA = 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC LS830 LS831 LS832 LS833 UNITS
│ΔVGS1-2/ΔT│max. Drift vs. Temperature
5
10 20 75 µV/ºC
│VGS1-2│max.
-IG typical
-IG typical
IGSS typical
IGSS typical
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
25 25 25 25 mV
0.1 0.1 0.1 0.5 pA
0.1 0.1 0.1 0.5 nA
0.2 0.2 0.2 1.0 pA
0.5 0.5 0.5 1.0 nA
CONDITIONS
VDG = 10V
ID = 30µA
TA = -55ºC to +125ºC
VDG = 10V
ID = 30µA
TA= +125ºC
VGS = 20V, VGS = 0V
VGS = 0
VGS = 20V
TA= +125ºC
Linear Integrated Systems
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Doc 201127 05/01/2014 Rev#A6 ECN# LS830 LS831 LS832 LS833