LS830-3 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

LS830 LS831 LS832 LS833
Linear Integrated Systems
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
ULTRA LOW DRIFT
ULTRA LOW LEAKAGE
LOW NOISE
LOW CAPACITANCE
|∆V_GS1-2 /∆T|= 5µV/°C max.
I_G = 80fA TYP.
e_n= 70nV/√Hz TYP.
C_ISS= 3pf MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-V_GSS
-V_DSO
-I_G(f)
-I_G
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
40V
10mA
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS830 LS831 LS832
|∆V_GS1-2 /∆T| max. Drift vs. Temperature
5
10
20
|V_GS1-2| max.
-I_G max
-I_G max
-I_GSS
-I_GSS
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
25
25
25
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.2
0.5
0.5
0.5
S1 G2
D1
D2
G1
S2
22 X 20 MILS
G1 ₃
D1 2
1
S1
5 ^S2
6 D2
7
G2
BOTTOM VIEW
LS833
75
25
0.5
0.5
1.0
1.0
UNITS
µV/°C
mV
pA
nA
pA
nA
CONDITIONS
V_DG= 10V
I_D= 30µA
T_A= -55°C to +125°C
V_DG= 10V
I_D= 30µA
T_A= +125°C
V_GS= 0
T_A= +125°C
V_GS= -20V
SYMBOL
BV_GSS
BV_GGO
Y_fss
Y_fs
|Y_fs1-2/Y_fs|
I_DSS
|I_DSS1-2/I_DSS|
V_GS(off) or V_P
V_GS
I_GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
TYP.
60
--
70
300
50
100
--
1
60
400
--
2
0.6
2
--
--
--
1
MAX.
--
--
UNITS
V
V
CONDITIONS
V_DS= 0
I_G= 1nA
I_D= 1nA
I_D= 0
I_S= 0
500
µmho V_DG= 10V V_GS= 0
f= 1kHz
200
µmho V_DG= 10V I_D= 30µA f= 1kHz
5
%
1000 µA
5
%
4.5
V
4
V
--
pA
V_DG= 10V V_GS= 0
V_DS= 10V
V_DG= 10V
V_GG= 20V
I_D= 1nA
I_D= 30µA
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