LS627 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – PHOTO FET LIGHT SENSITIVE JFET

Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR CRYSTALONICS FF627
FLAT GLASS TOP FOR EXTERNAL OPTICS
ULTRA HIGH SENSITIVITY
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
-55 to +165 °C
Maximum Power Dissipation
Continuous Power Dissipation
400mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Drain to Source
15V
Drain to Gate
15V
Gate to Source
-10V
LS627
PHOTO FET
LIGHT SENSITIVE JFET
TO-72
BOTTOM VIEW
D 2 3G
S 1 4C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
V_GS(off)
S_G
S_D
λ_Ig
λ_Id
I_DSS
I_GSS
g_fs
R_DS(on)
C_GS
C_GD
t_r
t_f
Gate to Source Cutoff Voltage (V_PO) 1.0
Gate Sensitivity²
6.4
5.0
V
24 µA/mW/cm²
Drain Sensitivity³
500
mA/mW/cm²
Gate Current (Light)⁴
10
37.5 nA/FC
Drain Current (Light)⁴
800
µA/FC
Drain Saturation Current
8.0
mA
Gate Leakage Current (Dark)
30
pA
Forward Transconductance (g_m)
8000
µS
Drain to Source On Resistance
100
Ω
Gate to Source Capacitance
Gate to Drain Capacitance
Rise Time⁵
Fall Time⁶
35
pF
20
30
ns
50
CONDITIONS
V_DS = 10V, I_D = 0.1µA
V_DS = 10V, V_GS = 0V, λ = 0.9µm
V_DS = 10V, V_GS = 0V, R_G = 1MΩ
V_DS = 10V, V_GS = 0V
V_DS = 10V, V_GS = 0V, R_G = 1MΩ
V_DS = 10V, V_GS = 0V
V_GS = -10V, V_DS = 0V
V_DS = 10V, V_GS = 0V, f = 1kHz
V_DS = 0.1V, V_GS = 0V
V_GS = -10V, f = 140kHz
V_GD = -10V, _f = 140kHz
V_DS = 10V, R_L = R_G = 100Ω
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