LS5911_15 Datasheet, PDF (1/3 Pages) Linear Integrated Systems – IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

LS5911 LS5912 LS5912C
IMPROVED LOW NOISE WIDEBAND
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
FEATURES
Improved Replacement for SILICONIX, FAIRCHILD, &
NATIONAL: 2N5911 & 2N5912
LOW NOISE (10kHz)
en ~ 4nV/√Hz
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS¹
gfs ≥ 4000µS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total)⁴
500mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
SOT-23
T_SO_OP _TV_-I₂E₃W
TOP VIEW
G1 1
D1 2
S1 3
6 S2
5 D2
4 G2
TOP VIEW
PDIP-A
PDIP-B
S1 1
D1 2
SS 3
G1 4
8 G2
7 SS
6 D2
5 S2
S1 1
D1 2
G1 3
NC 4
8 NC
7 G2
6 D2
5 S2
SOIC-A
S1 1
D1 2
SS 3
G1 4
8 G2
7 SS
6 D2
5 S2
SOIC-B
S1 1
D1 2
G1 3
NC 4
8 NC
7 G2
6 D2
5 S2
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
VGS1  VGS2
Δ VGS1  VGS2
ΔT
ID SS1
ID SS2
Differential Gate to Source
Cutoff Voltage
Differential Gate to Source
Voltage Change with
Temperature
Saturation Drain Current
Ratio
LS5911
LS5912 LS5912C
TYP
UNIT
MIN MAX MIN MAX MIN MAX
10
15
40 mV
20
40
40 µV/°C
0.95 1 0.95 1 0.95 1
IG1  IG2
Differential Gate Current
20
20
20 nA
gfs 1
gfs 2
CMRR
Forward Transconductance
Ratio
Common Mode Rejection
Ratio
0.95 1 0.95 1 0.95 1
85
dB
CONDITIONS
VDG = 10V, ID = 5mA
VDG = 10V, ID = 5mA
TA = -55 to +125°C
VDS = 10V, VGS = 0V
Notes 2, 3
VDG = 10V, ID = 5mA
TA = +125°C
VDS = 10V, ID = 5mA
f = 1kHz³
VDG = 5V to 10V
ID = 5mA
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP
LS5911
MIN MAX
LS5912
MIN MAX
LS5912C
MIN MAX
BVGSS Gate to Source Breakdown
VGS(off) ^{VGoaltteagtoe} Source Cutoff Voltage
-25
-25
-25
-1 -5 -1 -5 -1 -5
VGS(F) Gate to Source Forward Voltage 0.7
VGS Gate to Source Voltage
IDSS Drain to Source Saturation
IGSS ^{CGuartereLnet2}akage Current
-0.3 -4 -0.3 -4 -0.3 -4
7 40 7 40 7 40
-1
-50
-50
-50
IG Gate Operating Current
-1
-50
-50
-50
IG1G2 Gate to Gate Isolation Current
±1
±1
±1
UNIT CONDITIONS
IG = -1µA, VDS = 0V
V
VDS = 10V, ID = 1nA
IG = 1mA, VDS = 0V
VDG = 10V, IG = 5mA
mA VDS = 10V, VGS = 0V
pA ^{VGS = -15V, VDS = 0V}
VDG = 10V, ID = 5mA
uA VG1-VG2=±25VID = IS = 0
Linear Integrated Systems
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Doc 201132 11/18/15 Rev#A8 ECN# LS5911 LS5912 LS5912C