LS5911-2 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET

LS5911 LS5912 LS5912C
Linear Integrated Systems
FEATURES
Improved Replacement for SILICONIX, FAIRCHILD, &
NATIONAL: 2N5911 & 2N5912
LOW NOISE (10kHz)
e_n ~ 4nV/√Hz
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS¹
g_fs ≥ 4000µS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total)
500mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
IMPROVED LOW NOISE
WIDEBAND MONOLITHIC
DUAL N-CHANNEL JFET
TO-71
BOTTOM VIEW
G1 3
D1 2
S1 1
5 S2
6 D2
7 G2
TO-78
BOTTOM VIEW
SOT-23
TOP VIEW
G1 3
D1 2
G1 1
5 S2 D1 2
6 D2 ^{S1 3}
6 S2
5 D2
4 G2
S1 1
7 G2
PDIP-A
S1 1
8 G2
D1 2
7 SS
SS 3
6 D2
G1 4
5 S2
SOIC-A
S1 1
D1 2
SS 3
G1 4
8 G2
7 SS
6 D2
5 S2
PDIP-B
S1 1
8 NC
D1 2
7 G2
G1 3
6 D2
NC 4
5 S2
SOIC-B
S1 1
D1 2
G1 3
NC 4
8 NC
7 G2
6 D2
5 S2
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
VGS1 − VGS2
∆ VGS1 − VGS2
∆T
I DSS1
IDSS2
Differential Gate to Source
Cutoff Voltage
Differential Gate to Source
Cutoff Voltage Change with
Temperature
Gate to Source Saturation
Current Ratio
LS5911
LS5912 LS5912C
TYP
UNIT
MIN MAX MIN MAX MIN MAX
10
15
40 mV
20
40
40 µV/°C
0.95 1 0.95 1 0.95 1 %
IG1 − IG2
Differential Gate Current
20
20
20 nA
g fs1
gfs2
CMRR
Forward Transconductance
Ratio²
Common Mode Rejection
Ratio
0.95 1 0.95 1 0.95 1 %
85
dB
CONDITIONS
V_DG = 10V, I_D = 5mA
V_DG = 10V, I_D = 5mA
T_A = -55 to +125°C
V_DS = 10V, V_GS = 0V
V_DG = 10V, I_D = 5mA
T_A = +125°C
V_DS = 10V, I_D = 5mA
f = 1kHz
V_DG = 5V to 10V
I_D = 5mA
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
LS5911
LS5912 LS5912C
TYP
UNIT
MIN MAX MIN MAX MIN MAX
BV_GSS Gate to Source Breakdown Voltage
-25
-25
-25
V_GS(off) Gate to Source Cutoff Voltage
-1 -5 -1 -5 -1 -5
V
V_GS(F) Gate to Source Forward Voltage
0.7
V_GS Gate to Source Voltage
I_DSS Drain to Source Saturation Current³
-0.3 -4 -0.3 -4 -0.3 -4
7 40 7 40 7 40 mA
I_GSS Gate Leakage Current
I_G Gate Operating Current
-1
-50
-50
-50
pA
-1
-50
-50
-50
CONDITIONS
I_G = -1µA, V_DS = 0V
V_DS = 10V, I_D = 1nA
I_G = 1mA, V_DS = 0V
V_DG = 10V, I_G = 5mA
V_DS = 10V, V_GS = 0V
V_GS = -15V, V_DS = 0V
V_DG = 10V, I_D = 5mA
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