LS5905-9 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

Linear Integrated Systems
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
|∆V_GS1-2 /∆T|= 5µV/°C max.
I_G = 150fA TYP.
V_P= 2V TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
S1 G2
G1 ₃
5 ^S2
Maximum Voltage and Current for Each Transistor NOTE 1
-V_GSS
Gate Voltage to Drain or Source 40V
-V_DSO
-I_G(f)
-I_G
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
D1
D2
G1
S2
22 X 20 MILS
D1 2
1
S1
6 D2
7
G2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905
|∆V_GS1-2 /∆T| max. Drift vs. Temperature
5
10
20
40
40
|V_GS1-2| max.
-I_Gmax.
-I_Gmax.
-I_GSSmax.
-I_GSSmax.
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
5
5
10
15
15
1
1
1
1
3
1
1
1
1
3
2
2
2
2
5
5
5
5
5
10
UNITS CONDITIONS
µV/°C
mV
pA
V_DG= 10V, I_D= 30µA
T_A=-55°C to +125°C
V_DG=10V I_D= 30µA
nA
T_A= +125°C
pA
V_DS= 0V V_GS= 20V
nA
T_A= +125°C
SYMBOL
BV_GSS
BV_GGO
Y_fss
Y_fs
|Y_fs1-2/Y_fs|
I_DSS
|I_DSS1-2/I_DSS|
V_GS(off) or V_P
V_GS
I_GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
TYP.
60
--
70
300
50
100
--
1
60
400
--
2
0.6
2
--
--
--
1
MAX.
--
--
UNITS
V
V
CONDITIONS
V_DS= 0
I_G= 1nA
I_D= 1nA
I_D= 0
I_S= 0
500
µmho V_DG= 10V V_GS= 0
f= 1kHz
200
µmho V_DG= 10V I_D= 30µA f= 1kHz
5
%
1000 µA
5
%
4.5
V
4
V
--
pA
V_DG= 10V V_GS= 0
V_DS= 10V
V_DS= 10V
V_GG=20V
I_D= 1nA
I_D= 30µA
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