LS3954A_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

FEATURES
LOW DRIFT
IΔVGS1-2/ΔT│=5µV/°C max.
LOW LEAKAGE
IG=20pA TYP.
LOW NOISE
en=10Nv/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor¹
-VGSS Gate Voltage to Drain or Source 60V
-IG(f) Gate Forward Current
50mV
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ 25ºC²
LS3954A LS3954
LS3955 LS3956 LS3958
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
Top View
TO-71 & TO-78
Top View
SOIC
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC LS3954A LS3954 LS3955 LS3956 LS3958 UNITS
│∆VGS1-2/∆T│max. Drift vs. Temperature
5
10
25
50
100 µV/ºC
│VGS1-2│max.
Offset Voltage
5
5
10
15
25
mV
CONDITIONS
VDG = 20V, ID=200µA
TA = -55ºC to +125ºC
VDG =20V, ID=200µA
SYMBOL
BVGSS
BVGGO
gfss
gfs
│gfs1-2/gfs│
IDSS
│IDSS1-2/IDSS│
VGS(off)
VGS
-IG
-IG
-IG
-IGSS
CHARACTERISTIC
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Differential
DRAIN CURRENT
Full Conduction
Differential
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced VDG
At Full Conduction
MIN.
60
60
TYP.
--
--
MAX. UNITS
--
V
--
V
CONDITIONS
VDS= 0
IG= 1µA
IGG= ±1µA
ID= 0
IS= 0
1000 2000 4000 µS VDG= 20V
500 700 1250 µS VDG= 20V
-- ±0.6 ±3
%
VGS= 0 f = 1kHz
ID= 200µA
0.5
2
5
mA VDS= 20V
--
±1 ±5
%
VGS= 0
-1
-2 -4.5
V
VDS= 20V
-0.5 --
-4
V
VDS= 20V
ID= 1nA
ID= 200µA
--
20
50
pA VDG= 20V
ID= 200µA
--
--
50
nA VDG= 20V
ID= 200µA TA=+125 ºC
--
5
--
pA VDG= 10V
ID= 200µA
--
--
100
pA VDG= 20V
VDS= 0
Linear Integrated Systems
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Doc 201130 05/07/2014 Rev#A11 ECN# LS3954A LS3954 LS3955 LS3956 LS3958