LS3954-8 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

Linear Integrated Systems
LS3954A LS3954 LS3955
LS3956 LS3958
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
LOW LEAKAGE
LOW NOISE
|∆V_GS1-2 /∆T|= 5µV/°C max.
I_G = 20pA TYP.
e_n= 10nV/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +200°C
D1
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
G1
-V_GSS
Gate to Drain or Source Voltage 60V
-V_DSO
Drain to Source Voltage
60V
S2
-I_G(f)
Gate Forward Current
50mA
G1 ₃
S1
D1²
G2
1
S1
D2
5 ^S2
6 _D2
7
G2
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ 25°C
31 X 32 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS3954A LS3954 LS3955
|∆V_GS1-2 /∆T| max. Drift vs. Temperature
5
10
25
|V_GS1-2| max.
Offset Voltage
5
5
10
LS3956
50
15
LS3958
100
25
UNITS
µV/°C
mV
CONDITIONS
V_DG= 20V, I_D= 200µA
T_A= -55°C to +125°C
V_DG= 20V, I_D= 200µA
SYMBOL
BV_GSS
BV_GGO
Y_fss
Y_fs
|Y_fs1-2/Y_fs|
I_DSS
|I_DSS1-2/I_DSS|
V_GS(off) or V_P
V_GS
-I_G
-I_G
-I_G
-I_GSS
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced V_DG
At Full Conduction
MIN.
60
60
TYP.
--
--
1000
500
--
2000
700
0.6
0.5
2
--
1
1
2
0.5
--
--
20
--
--
--
5
--
--
MAX.
--
--
UNITS
V
V
CONDITIONS
V_DS= 0
I_G= 1nA
I_D= 1µA
I_D= 0
I_S= 0
3000
1000
3
µmho
µmho
%
V_DG= 20V
V_DG= 20V
V_GS= 0
f= 1kHz
I_D= 200µA
5
mA
V_DG= 20V V_GS= 0
5
%
4.5
V
V_DS= 20V I_D= 1nA
4
V
V_DS= 20V I_D= 200µA
50
pA
V_DG= 20V I_D= 200µA
50
nA
V_DG= 20V I_D= 200µA T_A=+125°C
--
pA
V_DG= 10V I_D= 200µA
100
pA
V_DG= 20V V_DS= 0
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