LS358_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS

LS358
LOG CONFORMANCE
MONOLITHIC DUAL
PNP TRANSISTORS
FEATURES
LOG CONFORMANCE
∆re ≤1Ω from ideal TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
(TA= 25°C unless otherwise noted)
IC
Collector-Current
Maximum Temperatures
Storage Temperature Range
-10mA
-65°C to +150°C
Operating Junction Temperature
-55°C to +150°C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation TA=25°C
250mW
500mW
Linear Derating Factor
2.3mW/°C 4.3mW/°C
5
6
7
TO-71 & TO-78
TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS358
∆re
Log Conformance
1.5
BVCBO
Collector-Base Breakdown Voltage -20
MIN.
BVCEO
Collector to Emitter Voltage
-20
MIN.
BVEBO
Emitter-Base Breakdown Voltage
-6.0
MIN.
BVCCO
Collector to Collector Voltage
45
MIN.
hFE
DC Current Gain
100
MIN.
600
MAX.
hFE
DC Current Gain
100
MIN.
600
MAX.
hFE
DC Current Gain
100
MIN.
VCE(SAT)
Collector Saturation Voltage
-0.5
MAX.
ICBO
Collector Cutoff Current
-0.2
MAX.
IEBO
COBO
CC1C2
Emitter Cutoff Current
-0.2
MAX.
Output Capacitance⁴
2.0
MAX.
Collector to Collector Capacitance⁴
2.0
MAX.
IC1C2
fT
NF
Collector to Collector Leakage Current ±0.5
Current Gain Bandwidth Product⁴
200
Narrow Band Noise Figure⁴
3.0
MAX.
MIN.
MAX.
UNITS
Ω
V
V
V
V
V
nA
nA
pF
pF
µA
MHz
dB
CONDITIONS
IC = -10-100-1000µA VCE = -5V
IC = -10µA
IE = 0A
IC = -10µA
IB = 0A
IE = -10µA
IC = 0A NOTE 2
IC = ±10µA, IB=IE = 0A
IC = -10µA
VCE = -5V
IC = -100µA
VCE = -5V
IC = -1mA
IC = -1mA
IE = 0A
IC = 0A
IE = 0A
VCC = 0V
VCC = ±45V
IC = -1mA
IC = -100µA
BW = 200Hz
f=1KHz
VCE = -5V
IB = -0.1mA
VCB = -15V
VEB = -3V
VCB = -5V
IB = IE = 0A
VCE = -5V
VCE = -5V
RG = 10 KΩ
Linear Integrated Systems
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Doc 201158 05/16/2014 Rev#A9 ECN# LS358