LS358 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS

Linear Integrated Systems
LS358
LOG CONFORMANCE
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
LOG CONFORMANCE
∆re ≤1Ω from ideal TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
I_C
Collector Current
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
10mA
-65°C to +200°C
+150°C
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
C1
C2
B1 E1 E2 B2
26 X 29 MILS
E1 ₃
B1 2
1
C1
5 ^E2
6 B2
7
C2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS358
∆re
Log Conformance
1.5
BV_CBO
BV_CEO
BV_EBO
BV_CCO
h_FE
Collector-Base Breakdown Voltage
20
Collector to Emitter Voltage
20
Emitter-Base Breakdown Voltage
6.2
Collector to Collector Voltage
45
DC Current Gain
100
600
h_FE
DC Current Gain
100
600
h_FE
V_CE(SAT)
I_CBO
I_EBO
C_OBO
C_C1C2
I_C1C2
f_T
NF
DC Current Gain
100
Collector Saturation Voltage
0.5
Collector Cutoff Current
0.2
Emitter Cutoff Current
0.2
Output Capacitance
2
Collector to Collector Capacitance
2
Collector to Collector Leakage Current
0.5
Current Gain Bandwidth Product
200
Narrow Band Noise Figure
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
Ω
V
V
V
V
CONDITIONS
I_C= 10-100-1000µA
V_CE = 5V
I_C = 10µA
I_E = 0
I_C = 10µA
I_B = 0
I_E = 10µA
I_C = 0 NOTE 2
I_C = 10µA
I_E = 0
I_C = 10µA
V_CE = 5V
I_C = 100µA
V_CE = 5V
V
nA
nA
pF
pF
nA
MHz
dB
I_C = 1mA
V_CE = 5V
I_C = 1mAI_B = 0.1 mA
I_E = 0
V_CB = 15V
I_C = 0
V_EB = 3V
I_E = 0
V_CB = 5V
V_CC = 0
V_CC = ±45V
I_C = 1mA
V_CE = 5V
I_C = 100µA
V_CE = 5V
BW = 200Hz
f=1KHz
R_G = 10 KΩ
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