LS3550_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL PNP TRANSISTORS

LS3550 SERIES
MONOLITHIC DUAL
PNP TRANSISTORS
FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING¹
2mV
EXCELLENT THERMAL TRACKING¹
3µV/°C
ABSOLUTE MAXIMUM RATINGS²
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
TBD
Maximum Currents
Collector Current
50mA
Maximum Voltages
Collector to Collector Voltage
60V
*SOT-23
TO^SP^OV^T-IE²³W
TOP VIEW
B1 1
E2 2
B2 3
6 C1
5 E1
4 C2
TO-78
TOP VIEW
TO-71
TOP VIEW
PDIP
TOP VIEW
PDIP
SOIC
TOP VIEW
SOIC
C1 1
B1 2
E1 3
NC 4
8 C2 C1 1
7 B2 B1 2
6 E2 E1 3
5 NC NC 4
8 C2
7 B2
6 E2
5 NC
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
LS3550A LS3550B LS3550C
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
VBE1  VBE2 _{Base to Emitter Voltage Differential}
2
5
10 mV IC = -100µA, VCE = -5V
VBE1  VBE2
ΔT
IB1  IB2
Base to Emitter Voltage Differential
Change with Temperature
Base Current Differential
3
5
15
µV/°C
IC = -100µA, VCE = -5V
TA = -40°C to +85°C
10
10
10 nA IC = -500µA, VCE = -5V
IB1  IB2
ΔT
h FE1
hFE2
Base Current Differential
Change with Temperature
Current Gain Differential
0.5
0.5
1.0
nA/°C
IC = -500µA, VCE = -5V
TA = -40°C to +85°C
10
10
15 % IC = -1mA, VCE = -5V
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
LS3550A LS3550B
MIN MAX MIN MAX
BVCBO Collector to Base Breakdown Voltage -45
-40
BVCEO Collector to Emitter Breakdown Voltage -45
-40
BVCCO
Collector to Collector Breakdown
Voltage
±60
±60
BVEBO Emitter to Base Breakdown Voltage³ -6.0
-6.0
VCE(SAT) Collector to Emitter Saturation Voltage
-0.50
-0.50
LS3550C
UNIT
MIN MAX
-20
15
-20
16
±60
-6.0
V
-1.2
CONDITIONS
IC = -10µA, IE = 0A
IC = -5mA, IB = 0A
ICC = -±1µA, IB=IC =0A
IE = -10µA, IC = 0A
IC = -10mA
IB = -1mA
Linear Integrated Systems
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Doc 201129 05/21/2014 Rev#A4 ECN#LS3550