LS350-2 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL PNP TRANSISTORS

Linear Integrated Systems
LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
h_FE ≥ 200 @ 10µA - 1mA
TIGHT V_BE MATCHING
|V_BE1-V_BE2| = 0.2mV TYP.
HIGH f_T
275MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
I_C
Collector Current
10mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +200°C
+150°C
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
C1
C2
B1 E1 E2 B2
26 X 29 MILS
E1 ₃
B1 2
1
C1
5 ^E2
6 B2
7
C2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS350 LS351 LS352
BV_CBO
BV_CEO
BV_EBO
BV_CCO
h_FE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector to Collector Voltage
DC Current Gain
25
45
60
25
45
60
6.2
6.2
6.2
30
60
100
100 150 200
600 600
h_FE
DC Current Gain
100 150 200
600 600
h_FE
DC Current Gain
100 150 200
V_CE(SAT)
Collector Saturation Voltage
0.5
0.5
0.5
I_CBO
Collector Cutoff Current
0.2
0.2
0.2
I_EBO
Emitter Cutoff Current
0.2
0.2
0.2
C_OBO
Output Capacitance
2
2
2
C_C1C2
Collector to Collector Capacitance
2
2
2
I_C1C2
Collector to Collector Leakage Current 0.5
0.5
0.5
f_T
Current Gain Bandwidth Product
200 200 200
NF
Narrow Band Noise Figure
3
3
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
V
V
V
V
V
nA
nA
pF
pF
nA
MHz
dB
CONDITIONS
I_C = 10µA
I_C = 10µA
I_E = 10µA
I_C = 10µA
I_C = 10µA
I_E = 0
I_B = 0
I_C = 0 NOTE 2
I_E = 0
V_CE= 5V
I_C = 100µA
V_CE= 5V
I_C = 1mA,
V_CE= 5V
I_C = 1mA
I_B = 0.1mA
I_E = 0
V_CB = NOTE 3
I_C = 0
V_EB =3V
I_E = 0
V_CB = 5V
V_CC = 0
V_CC = NOTE4
I_C = 1mA
V_CE = 5V
I_C = 100µA
V_CE = 5V
BW = 200Hz
f = 1KHz
R_G = 10 KΩ
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: [phone] • FAX: [phone]