LS3250_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL NPN TRANSISTORS

LS3250 SERIES
MONOLITHIC DUAL
NPN TRANSISTORS
*FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING¹
2mV
EXCELLENT THERMAL TRACKING¹
3µV/°C
ABSOLUTE MAXIMUM RATINGS²
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
TBD
Maximum Currents
Collector Current
50mA
Maximum Voltages
Collector to Collector Voltage
50V
*SOT-23
TO^SP^OV^T-IE²³W
TOP VIEW
B1 1
E2 2
B2 3
6 C1
5 E1
4 C2
TO-78
TOP VIEW
TO-71
TOP VIEW
PDIP
TOP VIEW
PDIP
SOIC
TOP VIEW
SOIC
C1 1
B1 2
E1 3
NC 4
8 C2 C1 1
7 B2 B1 2
6 E2 E1 3
5 NC NC 4
8 C2
7 B2
6 E2
5 NC
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
LS3250A LS3250B LS3250C
UNIT
MIN MAX MIN MAX MIN MAX
VBE1  VBE2 _{Base to Emitter Voltage Differential}
2
5
10 mV
VBE1  VBE2
ΔT
IB1  IB2
Base to Emitter Voltage Differential
Change with Temperature
Base Current Differential
3
5
15 µV/°C
10
10
10 nA
IB1  IB2
ΔT
h FE1
hFE2
Base Current Differential
Change with Temperature
Current Gain Differential
0.5
0.5
1.0 nA/°C
10
10
15 %
CONDITIONS
IC = 10µA , VCE = 5V
IC = 10µA , VCE = 5V
TA = -40°C to +85°C
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = -40°C to +85°C
IC = 1mA, VCE = 5V
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
LS3250A LS3250B
MIN MAX MIN MAX
BVCBO Collector to Base Breakdown Voltage 45
40
BVCEO Collector to Emitter Breakdown Voltage 45
40
BVCCO
Collector to Collector Breakdown
Voltage
±50
±50
BVEBO Emitter to Base Breakdown Voltage³ 6.0
6.0
VCE(SAT) Collector to Emitter Saturation Voltage
0.35
0.35
LS3250C
UNIT
MIN MAX
20
20
±50
V
6.0
1.2
CONDITIONS
IC = 10µA , IE = 0A
IC = 10mA, IB = 0
IC = ±1µA, IE = IB= 0A
IE = 10µA, IC = 0A
IC = 10mA, IB = 1mA
Linear Integrated Systems
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Doc 201128 05/15/2014 Rev#A5 ECN# LS 3250