LS320 Datasheet, PDF (1/1 Pages) Linear Integrated Systems – HIGH INPUT IMPEDANCE BiFET AMPLIFIER

LS320
Linear Integrated Systems
HIGH INPUT IMPEDANCE
BiFET AMPLIFIER
FEATURES
HIGH INPUT IMPEDANCE
HIGH TRANSCONDUCTANCE
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Drain Current
Maximum Voltages
Drain to Source¹
Gate to Source
r_Gs = 100GΩ
Y_FS = 30,000µS
-65 to +150 °C
-55 to +125 °C
200mW
I_D = 25mA
V_DSO = 20V
V_GSS = 20V
TO-72
BOTTOM VIEW
S 2 3D
S 1 4G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
V_DS
Drain to Source Voltage
-20
V
V_GS
Gate to Source Voltage
-12 -10 -7
V
g_fs
Common Source Forward Transconductance 30,000
µS
g_oss
Common Source Output Conductance
300
µS
r_Gs
Gate to Source Input Resistance
100
GΩ
C_ISS Input Capacitance
8
pF
C_RSS Reverse Transfer Capacitance
1.5
pF
e_n
Noise Voltage
25
µV
CONDITIONS
I_DS = 100µA, V_GS = 0V
I_DS = 10mA, V_gs = -10V^2,3
I_DS = 10mA, V_DS = -10V, f = 1kHz
I_DS = 10mA, V_DS = -10V, f = 1kHz
V_GS = 0 to 20V, T_J to 125 °C
I_DS = 10mA, V_DS = -10V
I_DS = 10mA, V_DS = -10V
I_DS = 10mA, V_DS = 10V
BW = 50 to 15kHz
PACKAGE OPTIONS
SOT-23
TOP VIEW
D¹
G2
3_S
TO-92
BOTTOM VIEW
DSG
123
FUNCTIONAL SCHEMATIC
D
G
S
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. The gate to source voltage must never exceed 100V, t < 10ms.
3. Additional screening available
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