LS310_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL NPN TRANSISTORS

FEATURES
VERY HIGH GAIN
hFE≥200@10µA-1mA
TIGHT VBE MATCHING
|VBE1 -VBE1| = 0.2mV TYP.
HIGH fT
250MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
IC
Collector
Current
10mA
Maximum Temperatures
Storage Temperature
-55° to +150°C
Operating Junction Temperature
-55° to +150°C
Maximum Power Dissipation
ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
250mW 500mW
Linear Derating Factor
2.3mW/°C 4.3mW/°C
LS310 LS311 LS312 LS313
MONOLITHIC DUAL
NPN
TRANSISTORS
Top View
Top View
SOT-23 6 LEADS TO-71 & TO-78
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
hFE
hFE
VCE(SAT)
ICBO
IEBO
COBO
CC1C2
IC1C2
fT
NF
Collector to Base Voltage
25 45
Collector to Emitter Voltage
25 45
Emitter-Base Breakdown
Voltage
6.0 6.0
Collector to Collector Voltage 45 45
DC Current Gain
150 150
DC Current Gain
150 150
DC Current Gain
150 150
Collector Saturation Voltage 0.25 0.25
Collector Cutoff Current
0.2 0.2
Emitter Cutoff Current
0.2 0.2
Out put Capacitance
2
2
Collector to Collector
Capacitance
2
2
Collector to Collector Leakage
Current
1.0
1.0
Current Gain Bandwidth
Product
200 200
Narrow Band Noise Figure
3
3
60
60
6.0
60
200
200
200
0.25
0.2
0.2
2
2
1.0
200
3
45 MIN. V
45 MIN. V
6.0 MIN. V
45 MIN. V
400 MIN.
1000 MAX.
400 MIN.
400 MIN.
0.25 MAX. V
0.2 MAX. nA
0.2 MAX. nA
2
MAX. pF
2
MAX. pF
1.0 MAX. µA
200 MIN. MHz
3 MAX. dB
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0 NOTE 2
IC = 10µA, IE = IB = 0A
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 1mA, IB = 0.1mA
IE = 0, VCB = NOTE 3
IC = 0, VCB = 3V
IE = 0, VCB = 5V
VCC = 0V
VCC = NOTE 4
IC = 1mA , VCE = 5V
IC = 100µA , VCE = 5V
BW = 200Hz, RG = 10KΩ
F=1KHz
Linear Integrated Systems
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Doc 201121 03/17/2014 Rev#A10 ECN# LS310_11_12_13