LS310-3 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL NPN TRANSISTORS

Linear Integrated Systems
LS310 LS311 LS312 LS313
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
VERY HIGH GAIN
TIGHT V_BE MATCHING
HIGH f_T
h_FE ≥ 200 @ 10µA-1mA
|V_BE1-V_BE2| = 0.2mV TYP.
250MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
I_C
Collector Current
10mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +200°C
+150°C
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
C1
C2
B1 E1 E2 B2
26 X 29 MILS
E1
3
B1 ₂
1
C1
E2
5
6 ^B2
7
C2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
BV_CBO
BV_CEO
BV_EBO
BV_CCO
h_FE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
25
45
25
45
6.2 6.2
30
100
150 150
60 45 MIN. V
60 45 MIN. V
6.2 6.2 MIN. V
100 100 MIN. V
200 400 MIN.
1000 MAX.
I_C = 10µA
I_C = 10µA
I_E = 10µA
I_C = 10µA
I_C = 10µA
I_E = 0
I_B = 0
I_C = 0 NOTE 2
I_E = 0
V_CE = 5V
h_FE
DC Current Gain
h_FE
DC Current Gain
V_CE(SAT) Collector Saturation Voltage
I_CBO
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
C_OBO
Output Capacitance
C_C1C2 Collector to Collector Capacitance
I_C1C2
Collector to Collector Leakage Current
f_T
Current Gain Bandwidth Product
NF
Narrow Band Noise Figure
150
150
0.25
0.2
0.2
2
2
0.5
200
3
150
150
0.25
0.2
0.2
2
2
0.5
200
3
200
200
0.25
0.2
0.2
2
2
0.5
200
3
400
400
0.25
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
nA
nA
pF
pF
nA
MHz
dB
I_C = 100µA V_CE = 5V
I_C = 1mA V_CE = 5V
I_C = 1mA I_B = 0.1mA
I_E = 0
V_CB = NOTE 3
I_E = 0
V_CB = 3V
I_E = 0
V_CB = 5V
V_CC = 0
V_CC = NOTE 4
I_C = 1mA V_CE = 5V
I_C = 100µA V_CE = 5V
BW = 200Hz, R_G = 10 KΩ
f=1KHz
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