LS301-3 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS

Linear Integrated Systems
LS301 LS302 LS303
HIGH VOLTAGE
SUPER-BETA MONOLITHIC
DUAL NPN TRANSISTORS
FEATURES
VERY HIGH GAIN
LOW OUTPUT CAPACITANCE
TIGHT V_BE MATCHING
HIGH f_T
h_FE ≥ 2000 @ 1.0µA TYP.
C_OBO ≤2.0pF
|V_BE1-V_BE2| = 0.2mV TYP.
100MHz
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
I_C
Collector Current
5mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +200°C
+150°C
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
C1
C2
B1 E1 E2 B2
26 X 29 MILS
E1 ₃
B1 2
1
C1
5 ^E2
6 B2
7
C2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS301 LS302
BV_CBO
BV_CEO
BV_EBO
BV_CCO
h_FE
h_FE
h_FE
V_CE(SAT)
I_CBO
I_EBO
C_OBO
C_C1C2
I_C1C2
f_T
NF
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
18
18
6.2
100
2000
2000
2000
0.5
100
0.2
2
2
0.5
100
3
35
35
6.2
100
1000
1000
1000
0.5
100
0.2
2
2
0.5
100
3
LS303
10
10
6.2
100
2000
2000
2000
0.5
100
0.2
2
2
0.5
100
3
MIN.
MIN.
MIN.
MIN.
TYP.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
V
V
V
V
V
pA
pA
pF
pF
nA
MHz
dB
CONDITIONS
I_C = 10µA
I_E = 0
I_C = 10µA
I_B = 0
I_E = 10µA I_C = 0 NOTE 2
I_C = 10µA
I_E = 0
I_C = 1µA
V_CE = 5V
I_C = 10µA
V_CE = 5V
I_C = 500µA
V_CE = 5V
I_C = 1mA
I_B = 0.1mA
I_E = 0
V_CB = NOTE 3
I_E = 0
V_EB = 3V
I_E = 0
V_CB = 1V
V_CC = 0
V_CC = NOTE 4
I_C = 200µA
V_CE = 5V
I_C = 10µA
V_CE = 3V
BW = 200Hz
f = 1KHz
R_G = 10 KΩ
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