J201_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – HIGH GAIN N-CHANNEL JFET AMPLIFIER

J/SST201 SERIES
HIGH GAIN N-CHANNEL
JFET AMPLIFIER
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS¹
VGS(off) ≤ 1.5V
AV = 80 V/V
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation TA=25^°C
Maximum Current
350mW
Forward Gate Current
50mA
Maximum Voltages
Gate to Drain Voltage
-40V
Gate to Source Voltage
-40V
J SERIES
TO-92
TOP VIEW
SST SERIES
SOT-23
TOP VIEW
SOT-23
TOP VIEW
D¹
S²
3_G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BVGSS
Gate to Source
Breakdown Voltage
J/SST201, 202 -40
J/SST204 -25
VGS(off)
Gate to Source Cutoff
Voltage
J/SST201 -0.3
J/SST202 -0.8
J/SST204 -0.2
-1.5 V
-4
2
IDSS
Drain to Source
Saturation Current²
J/SST201 0.2
J/SST202 0.9
J/SST204 0.2
1
4.5 mA
3
IGSS
Gate Reverse Current
-100
IG
Gate Operating Current
-2
pA
ID(off)
Drain Cutoff Current
2
gfs
Forward
Transconductance
J/SST201, 204 0.5
J/SST202
1
mS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
4.5
pF
1.3
en
Noise Voltage
6
nV/√Hz
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 15V, ID = 10nA
VDS = 15V, VGS = 0V
VGS = -20V, VDS = 0V
VDG = 10V, ID = 0.1mA
VDS = 15V, VGS = -5V
VDS = 15V, VGS = 0V, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 10V, VGS = 0V, f = 1kHz
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]
Doc 201112 05/15/2014 Rev#A8 ECN# J SST 201