J201 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier

Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS¹
V_GS(off) ≤ 1.5V
A_V = 80 V/V
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
350mW
Maximum Current
Forward Gate Current
50mA
Maximum Voltages
Gate to Drain Voltage
-40V
Gate to Source Voltage
-40V
J/SST201 SERIES
HIGH GAIN
N-CHANNEL JFET
J SERIES
TO-92
BOTTOM VIEW
DSG
123
SST SERIES
SOT-23
TOP VIEW
D¹
S²
3_G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_GSS
Gate to Source
Breakdown Voltage
J/SST201, 202 -40
J/SST204 -25
V_GS(off)
Gate to Source Cutoff
Voltage
J/SST201 -0.3
J/SST202 -0.8
J/SST204 -0.3
-1.5 V
-4
2
I_DSS
Drain to Source
Saturation Current²
J/SST201 0.2
J/SST202 0.9
J/SST204 0.2
1
4.5 mA
3
I_GSS
I_G
I_D(off)
g_fs
Gate Reverse Current
-2
Gate Operating Current
Drain Cutoff Current
Forward
Transconductance
J/SST201, 204 0.5
J/SST202
1
-100
-2
pA
2
mS
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
e_n
Noise Voltage
4.5
pF
1.3
6
nV/√Hz
CONDITIONS
I_G = -1µA, V_DS = 0V
V_DS = 15V, I_D = 10nA
V_DS = 15V, V_GS = 0V
V_GS = -20V, V_DS = 0V
V_DG = 10V, I_D = 0.1mA
V_DS = 15V, V_GS = -5V
V_DS = 15V, V_GS = 0V, f = 1kHz
V_DS = 15V, V_GS = 0V, f = 1MHz
V_DS = 10V, V_GS = 0V, f = 1kHz
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