J-SST111 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – SINGLE N-CHANNEL JFET SWITCH

J/SST111 SERIES
SINGLE N-CHANNEL
JFET SWITCH
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
4ns
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (J)³
360mW
Continuous Power Dissipation (SST)³
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
Gate to Source
-35V
J SERIES
TO-92
TOP VIEW
SST SERIES
SOT-23
TO_SP_OV_TI_-E₂W₃
TOP VIEW
D¹
S²
3_G
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
J/SST111 J/SST112 J/SST113
TYP
UNIT
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
-35
-35
-35
VGS(off) Gate to Source Cutoff Voltage
-3 -10 -1 -5
-3 V
VGS(F) Gate to Source Forward Voltage
0.7
IDSS Drain to Source Saturation Current²
20
5
2
mA
IGSS Gate Leakage Current
-0.005
-1
-1
-1 nA
IG Gate Operating Current
-5
pA
ID(off) Drain Cutoff Current
0.005
1
1
1 nA
rDS(on) Drain to Source On Resistance
30
50
100 Ω
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 15V, ID = 1.0mA
VDS = 5V, VGS = -10V
VGS = 0V, VDS = 0.1V
Linear Integrated Systems
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Doc 20119 05/14/2014 Rev# A6 ECN# J SST 111