3N163-4 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – P-CHANNEL ENHANCEMENT MODE

Linear Integrated Systems
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163
3N164
Transient G-S Voltage (NOTE 1)
Drain Current
Storage Temperature
Power Dissipation
-40V
-30V
±125V
50mA
-65°C to +200°C
375mW
D
G
18 X 30 MILS
S
Case
G
2
1
D
Case
3
4
S
TO-72
Bottom View
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
3N164
MIN MAX MIN MAX
I_GSSF
BV_DSS
BV_SDS
V_GS(th)
V_GS(th)
V_GS
I_DSS
I_SDS
r_DS(on)
I_D(on)
g_fs
g_os
C_iss
C_rss
C_oss
Gate Forward Current
-10
T_A=+125°C
Drain-Source Breakdown Voltage -40
Source-Drain Breakdown Voltage -40
Threshold Voltage
-2.0
Threshold Voltage
-2.0
Gate Source Voltage
-3.0
Zero Gate Voltage Drain Current
Source Drain Current
Drain-Source on Resistance
On Drain Current
-5.0
Forward Transconductance
2000
Output Admittance
Input Capacitance-Output Shorted
Reverse Transfer Capacitance
Output Capacitance Input Shorted
-25
-5.0
-5.0
-6.5
200
400
250
-30
4000
250
2.5
0.7
3.0
-10
-30
-30
-2.0
-2.0
-3.0
-3.0
1000
pA
-25
-5.0
-5.0
-6.5
400
800
300
-30
4000
250
2.5
0.7
3.0
UNITS CONDITIONS
V_GS=-40V
V_DS=0 (3N163)
V_GS=-30V
V_DS=0 (3N164)
I_D=-10µA
V_GS=0
V
I_S=-10µA
V_GD=0 V_BD=0
V_DS=V_GS
I_D=-10µA
V_DS=-15V
I_D=-10µA
V_DS=-15V
I_D=-0.5mA
pA
V_DS=-15V
V_GS=0
V_DS=15V
V_GS=V_DB=0
ohms V_GS=-20V
I_D=-100µA
mA
V_DS=-15V
V_GS=-10V
µs
V_DS=-15V
I_D=-10mA f=1kHz
pF
V_DS=-15V
(NOTE 2)
I_D=-10mA f=1MHz
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: [phone] • FAX: [phone]