3550 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL PNP TRANSISTORS

LS3550 SERIES
Linear Integrated Systems
FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING¹
2mV
EXCELLENT THERMAL TRACKING¹
3µV/°C
ABSOLUTE MAXIMUM RATINGS²
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
TBD
Maximum Currents
Collector Current
50mA
Maximum Voltages
Collector to Collector Voltage
80V
MONOLITHIC DUAL
PNP TRANSISTORS
SOT-23
TOP VIEW
B1 ¹
E2 ²
B2 ³
6 _C1
5 _E1
4 _C2
TO-78
BOTTOM VIEW
E1 3
B1 2
C1 1
5 E2
6 B2
7 C2
TO-71
BOTTOM VIEW
C1 1
E1 3
B1 2
C1 1
B1 2
5 E2
E1 3
6 B2
NC 4
7 C2
PDIP
8 C2 C1 1
7 B2 B1 2
6 E2 E1 3
5 NC NC 4
SOIC
8 C2
7 B2
6 E2
5 NC
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
LS3250A LS3250B LS3250C
UNIT
MIN MAX MIN MAX MIN MAX
VBE1 − VBE2 _{Base to Emitter Voltage Differential}
2
5
10 mV
VBE1 − VBE2
∆T
IB1 − IB2
Base to Emitter Voltage Differential
Change with Temperature
Base Current Differential
3
5
15 µV/°C
10
10
10 nA
IB1 − IB2
∆T
h FE1
hFE2
Base Current Differential
Change with Temperature
Current Gain Differential
0.5
0.5
1.0 nA/°C
10
10
15 %
CONDITIONS
I_C = -10mA, V_CE = -5V
I_C = -10mA, V_CE = -5V
T_A = -40°C to +85°C
I_C = -10µA, V_CE = -5V
I_C = -10µA, V_CE = -5V
T_A = -40°C to +85°C
I_C = -10µA, V_CE = -5V
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
LS3250A LS3250B
MIN MAX MIN MAX
BV_CBO Collector to Base Breakdown Voltage -45
-40
BV_CEO Collector to Emitter Breakdown Voltage -45
-40
BV_CCO
Collector to Collector Breakdown
Voltage
-80
-80
BV_EBO Emitter to Base Breakdown Voltage³ -6.2
-6.2
V_CE(SAT) Collector to Emitter Saturation Voltage
-0.25
-0.25
LS3250C
UNIT
MIN MAX
-20
-20
-80
V
-6.2
-1.2
CONDITIONS
I_C = -10mA, I_E = 0A
I_C = -10µA, I_E = 0A
I_E = -10µA, I_C = 0A
I_C = -100mA
I_B = -10mA
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