2N5114_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – SINGLE P-CHANNEL JFET SWITCH

2N5114 SERIES
SINGLE P-CHANNEL
JFET SWITCH
FEATURES
REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116
LOW ON RESISTANCE
75Ω
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to 150°C
Junction Operating Temperature
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation³
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
2N5114
2N5115
2N5116
TYP
UNIT
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
30
30
30
VGS(off) Gate to Source Cutoff Voltage
5 10 3
6
1
4
VGS(F) Gate to Source Forward Voltage -0.7
-1
-1
-1.0
-1.3
-1
V
VDS(on) Drain to Source On Voltage
-0.7
-0.8
-0.5
-0.6
IDSS Drain to Source Saturation Current²
-30 -195
-15 -110 -5
mA
-55
IGSS Gate Leakage Current
5
500
500
500
IG Gate Operating Current
-5
-10
-500
pA
ID(off) Drain Cutoff Current
-10
-500
-10
-500
rDS(on) Drain to Source On Resistance
75
100
150 Ω
CONDITIONS
IG = 1µA, VDS = 0V
VDS = -15V, ID = -1nA
IG = -1mA, VDS = 0V
VGS = 0V, ID = -15mA
VGS = 0V, ID = -7mA
VGS = 0V, ID = -3mA
VDS = -18V, VGS = 0V
VDS = -15V, VGS = 0V
VGS = 20V, VDS = 0V
VDG = -15V, ID = -1mA
VDS = -15V, VGS = 12V
VDS = -15V, VGS = 7V
VDS = -15V, VGS = 5V
VGS = 0V, ID = -1mA
Note: All Min & Max limits are absolute values. Negative signs indicate electrical polarity only.
Linear Integrated Systems
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Doc 201134 5/14/2014 Rev#A6 ECN# 2N5114