2N5018 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – SINGLE P-CHANNEL JFET SWITCH

Linear Integrated Systems
2N5018 SERIES
SINGLE P-CHANNEL
JFET SWITCH
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
75Ω
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 200°C
Junction Operating Temperature
-55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
TO-18
BOTTOM VIEW
G 2 3D
S1
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
2N5018
2N5019
TYP
MIN MAX MIN MAX
BV_GSS Gate to Source Breakdown Voltage
V_GS(off) Gate to Source Cutoff Voltage
V_DS(on)
I_DSS
I_GSS
Drain to Source On Voltage
Drain to Source Saturation Current²
Gate Leakage Current
I_D(off) Drain Cutoff Current
30
30
10
5
-0.5
-0.5
-10
-5
2
2
-10
-10
-10
-10
I_DGO
r_DS(on)
Drain Reverse Current
Drain to Source On Resistance
-2
-2
75
150
UNITS
V
mA
nA
µA
nA
Ω
CONDITIONS
I_G = 1µA, V_DS = 0V
V_DS = -15V, I_D = -1µA
V_GS = 0V, I_D = -6mA
V_GS = 0V, I_D = -3mA
V_DS = -20V, V_GS = 0V
V_GS = 15V, V_DS = 0V
V_DS = -15V, V_GS = 12V
V_DS = -15V, V_GS = 7V
V_DG = -15V, I_S = 0A
I_D = -1mA, V_GS = 0V
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