2N4416 Datasheet, PDF (1/2 Pages) Calogic, LLC – N-Channel JFET High Frequency Amplifier

Linear Integrated Systems
2N/SST4416 2N4416A
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
4 dB (max)
EXCEPTIONAL GAIN (400 MHz)
ABSOLUTE MAXIMUM RATINGS¹
10 dB (min)
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Currents
Gate Current
10mA
Maximum Voltages
Gate to Drain or Gate to Source LS4416
-30V
Gate to Drain or Gate to Source LS4416A
-35V
2N SERIES 2N SERIES* SST SERIES
TO-72
TO-92
BOTTOM VIEW _{BOTTOM VIEW}
SOT-23
TOP VIEW
D 2 3G
D1
SDG
3_G
S 1 4C
123
S2
*Optional Package For 2N4416
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_GSS
V_GS(off)
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/SST4416 -30
2N4416A
-35
2N/SST4416
2N4416A
-2.5
V
-6
-6
I_DSS
Gate to Source Saturation Current
5
I_GSS
Gate Leakage Current
2N
SST
15 mA
-0.1
nA
-1.0
g_fs
Forward Transconductance
g_os
Output Conductance
C_iss
Input Capacitance²
C_rss
Reverse Transfer Capacitance²
C_oss
Output Capacitance²
e_n
Equivalent Input Noise Voltage
4500
7500
µS
50
0.8
4
pF
2
6
nV/√Hz
CONDITIONS
I_G = -1µA, V_DS = 0V
V_DS = 15V, I_D = 1nA
V_DS = 15V, V_GS = 0V
V_GS = -20V, V_DS = 0V
V_GS = -15V, V_DS = 0V
V_DS = 15V, V_GS = 0V, f = 1kHz
V_DS = 15V, V_GS = 0V, f = 1MHz
V_DS = 10V, V_GS = 0V, f = 1kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]