2N4351_15 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – N-CHANNEL MOSFET ENHANCEMENT MODE

2N4351
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 2N4351
HIGH DRAIN CURRENT
ID = 20mA
HIGH GAIN
gfs = 1000µS
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation, TA=25°C
Continuous Power Dissipation³
Maximum Current
Drain to Source
Maximum Voltages
Drain to Body
Drain to Source
Gate to Source
-55 to +150 °C
-55 to +150 °C
350mW
20mA
25V
25V
±30V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
Drain to Source Breakdown Voltage
25
ID = 10µA, VGS = 0V
VDS(on)
Drain to Source "On" Voltage
1
V
ID = 2mA, VGS = 10V
VGS(th)
Gate to Source Threshold Voltage
1
IGSS
Gate Leakage Current
5
VDS = 10V, ID = 10µA
±10 pA VGS = ±30V, VDS = 0V
IDSS
Drain Leakage Current "Off"
10
nA VDS = 10V, VGS = 0V
ID(on)
Drain Current "On"
3
mA VGS = 10V, VDS = 10V
gfs
Forward Transconductance
1000
µS VDS = 10V, ID = 2mA, f = 1kHz
rds(on)
Crss
Ciss
Cdb
Drain to Source "On" Resistance
Reverse Transfer Capacitance²
Input Capacitance²
Drain to Body Capacitance²
300
Ω
VGS = 10V, ID = 100uA, f = 1kHz
1.3
VDS = 0V, VGS = 0V, f = 140kHz
5.0 pF VDS = 10V, VGS = 0V, f = 140kHz
5.0
VDB = 10V, f = 140kHz
Linear Integrated Systems
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Doc 201154 11/12/15 Rev#A4 ECN# 2N4351