LPT3321-PF Datasheet, PDF (2/4 Pages) LIGITEK electronics co., ltd. – NPN SILICON PHOTOTRANSISTOR LED LAMPS

PART NO.LPT3321-PF
Package Dimension
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/3
Features
5.0 5.9
7.6 _8.6
. High illumination sensitivity
. Stable characteristics
. Spectrally and mechanically
matched with IR emitter
Description
12.5MIN.
2.3TYP.
12
1.0MIN.
1.EMITTER
2.COLLECTOR
The LPT3321-PF series are silicon
nitride passivated NPN planar
phototransistors with exceptionally
table characteristics and high
illumination sensitivity the cases of
LPT3321-PF are ncapsulated in
dark blue transparent plastic T1 3/4
package individuallt
Note:1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted
2.Specifications are subject to change without notice
•MAXIMUM RATINGS(Ta=25℃)
PARAMETER
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature
Storage Temperature
Lead Soldering Temperature(1.6mm From Body)
MAXIMUM RATINGS
UNIT
100
mw
30
V
5
V
-50℃ TO +100℃
-50℃ TO +100℃
260℃ for 3 seconds
•ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL
Min.
Typ.
Max.
UNIT TEST CONDITION
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
Ic=1mA
V
Ee=0mw/c㎡
Emitter-Collector
Breakdown Voltage
V(BR)ECO
5
V
IE=100μA
Ee=0mw/c㎡
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
VCE(sat)
Tr
Tf
0.4
Ic=0.5mA
V
Ee=20mw/c㎡
5
μs
VCE=30V
5
μs IC=800μA,RL=1KΩ
Collector Dark
Current
ICEO
100
nA
VCE=10V
Ee=0mw/c㎡
On State Collector
Ip(on)
1
Current
2
4
8
2
mA
4
mA
VCE=5v
Ee=1mw/c㎡
8
mA
λP=940nm
mA