LPT3323 Datasheet, PDF (1/1 Pages) LIGITEK electronics co., ltd. – NPN SILICON PHOTOTRANSISTOR LED LAMPS

NPN SILICON PHOTOTRANSISTOR LED LAMPS
Package Dimension
5.0 5.9
LPT3323
SERIES
Features
. High illumination sensitivity
. Stable characteristics
. Spectrally and mechanically
matched with IR emitter
7.6 _8.6
Description
0.5
TYP
12.5MIN
1.0MIN
1.EMITTER
2.COLLECTOR
2.3TYP
12
Note:1.All dimension are in millimeter tolerance is 0.25mm unless otherwise noted
2.Specifications are subject to change without notice
The LPT3323 series are silicon nitride
passivated NPN planar
phototransistors with exceptionally
stable characteristics and high
illumination sensitivity the cases of
LPT3323 are encapsulated in
water clear plastic T1 3/4 package
individuallt
MAXIMUM RATINGS(Ta=25 )
PARAMETER
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature
MAXIMUM RATINGS
100
30
5
-50 TO +100
UNIT
mw
V
V
Storage Temperature
-50 TO +100
Lead Soldering Temperature(1.6mm From Body)
260 for 5 seconds
ELECTRICAL CHARACTERISTICS(Ta=25 )
PARAMETER
SYMBOL
Min.
Typ.
Max.
UNIT TEST CONDITION
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
Ic=1mA
V
Ee=0mw/c
Emitter-Collector
Breakdown Voltage
V(BR)ECO
5
V
IE=100 A
Ee=0mw/c
Collector-Emitter
Saturation Voltage
VCE(sat)
Ic=0.5mA
0.4
V
Ee=20mw/c
Rise Time
Tr
5
Fall Time
Tf
5
VCE=30V
IC=800 A RL=1K
Collector Dark
Current
ICEO
100
nA
VCE=10V
Ee=0mw/c
On State Collector
Ip(on)
1
Current
2
4
8
2
mA
4
mA
VCE=5v
Ee=1mw/c
8
mA
P=940nm
mA
DOC. NO : QW0905-LPT3323
REV. : C
DATE : 18 - Aug - 2005