MSM56V16161NP Datasheet, PDF (6/44 Pages) LAPIS Semiconductor Co., Ltd. – 2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM

FEDD56V16161NP-02
MSM56V16161NP
DC Characteristics (Power Supply Current)
Parameter
Symbol
Bank
Condition
CKE
Others
Average Power
Supply Current
(Operating)
ICC1
One Bank
Active
CKE VIH ^{tCC = Min.}
t_RC = Min.
No Burst
Power Supply
Current
(Standby)
Both
ICC2 Banks
CKE VIH
t_CC = Min.
Precharge
Average Power
Supply Current
(Clock
Suspension)
Both
ICC3S Banks
Active
CKE VIL _{tCC = Min.}
Average Power
Supply Current
(Active
Standby)
One Bank ^{CKE VIH}
ICC3 _Active
t_CC = Min.
Power Supply
Current (Burst)
Both
ICC4 Banks
Active
CKE VIH _{tCC = Min.}
Ta= -40 to 85°C
VCC = VCCQ = 3.0V~3.6V
MSM56V16161NP
-6
-7
-75
-10 Unit Note
Max.
Max.
Max.
Max.
120
100
90
70 _{mA 1, 2}
50
40
35
30 mA 3
3
3
3
3 mA 2
50
45
40
35 mA 3
160
140
130
100 mA 1, 2
Power Supply
Current
(Auto-Refresh)
ICC5 ^{One Bank CKE VIH tCC = Min.}
Active
t_RC = Min.
160
140
130
100 mA 2
Average Power
Both
Supply Current ICC6 Banks
CKE VIL _{tCC = Min.}
2
2
2
2 mA
(Self-Refresh)
Precharge
Average Power
Both
Supply Current ICC7 Banks
CKE VIL _{tCC = Min.}
2
2
2
(Power Down)
Precharge
Notes: 1. Measured with outputs open.
2. The address and data can be changed once or left unchanged during one cycle.
3. The address and data can be changed once or left unchanged during two cycles.
2 mA
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