MSM56V16161N Datasheet, PDF (28/44 Pages) LAPIS Semiconductor Co., Ltd. – 2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM

FEDD56V16161N-01
MSM56V16161N
FUNCTION TRUTH TABLE
FUNCTION TRUTH TABLE (Table 1) (1/3)
Current
State *¹
/CS /RAS /CAS /WE
ADDR
Idle
H
X
X
X
X
L
H
H
X
X
L
H
L
H BA, CA, A10
L
H
L
L BA, CA, A10
L
L
H
H
BA, RA
L
L
H
L
BA, A10
L
L
L
H
X
L
L
L
L
V, A11=0
L
L
L
L
V, A11=1
Row
H
X
X
X
X
Active
L
H
H
X
X
L
H
L
H BA, CA, A10
L
H
L
L BA, CA, A10
L
L
H
H
BA, RA
L
L
H
L
BA, A10
L
L
L
H
X
L
L
L
L
X
Read
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
L
H
L
H BA, CA, A10
L
H
L
L BA, CA, A10
L
L
H
H
BA, RA
L
L
H
L
BA, A10
L
L
L
H
X
L
L
L
L
X
Write
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
L
H
L
H BA, CA, A10
L
H
L
L BA, CA, A10
L
L
H
H
BA, RA
L
L
H
L
BA, A10
L
L
L
H
X
L
L
L
L
X
Command
NOP
NOP/BST
RD/RDA
WRT/WRTA
ACT
PRE/PALL
REF
MRS
EMRS
NOP
NOP/BST
RD/RDA
WRT/WRTA
ACT
PRE/PALL
REF
MRS/EMRS
NOP
NOP
BST
RD/RDA
WRT/WRTA
ACT
PRE/PALL
REF
MRS/EMRS
NOP
NOP
BST
RD/RDA
WRT/WRTA
ACT
PRE/PALL
REF
MRS/EMRS
Action
NOP
NOP
ILLEGAL ^*2
ILLEGAL ^*2
Row Active
NOP ^*3
Auto-Refresh or Self-Refresh ^*4
Mode Register Set ^*4
Extended Mode Register Set ^*4
NOP
NOP
Read / Read auto Precharge ^*5
Write / Write auto Precharge ^*5
ILLEGAL ^*6
Precharge
ILLEGAL
ILLEGAL
Continue Row Active after Burst ends
Continue Row Active after Burst ends
Term Burst --> Row Active
Term Burst, start new Burst Read
Term Burst, start new Burst Write
ILLEGAL ^*6
Term Burst, execute Row Precharge
ILLEGAL
ILLEGAL
Continue Row Active after Burst ends
Continue Row Active after Burst ends
Term Burst --> Row Active
Term Burst, start new Burst Read
Term Burst, start new Burst Write
ILLEGAL ^*6
Term Burst, execute Row Precharge
ILLEGAL
ILLEGAL
28/44