MR44V064A Datasheet, PDF (13/16 Pages) LAPIS Semiconductor Co., Ltd. – 64k(8,192-Word  8-Bit) FeRAM (Ferroelectric Random Access Memory)

FEDR44V064A-01
MR44V064A
READ/WRITE CYCLES AND DATA RETENTION
Parameter
Min.
Read/Write Cycle
10¹²
Data Retention
10
(Under recommended operating conditions)
Max.
Unit
Note

Cycle

Year
CAPACITANCE
Signal
Symbol
Min.
Max.
Unit
Input Capacitance
C_IN

10
pF
Input/Output Capacitance
C_OUT

10
pF
Note1:
Sampling value. Measurement conditions are V_IN = V_OUT = GND, f = 1MHz, and Ta = 25°C
Note
1
1
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