MR45V200A Datasheet, PDF (1/17 Pages) List of Unclassifed Manufacturers – 2M(262,144-Word x 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI

MR45V200A
FEDR45V200A-01
Issue Date: Jan. 31, 2014
2M(262,144-Word  8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI
GENERAL DESCRIPTION
The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM)
developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using
Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup
required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks,
such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and
the power consumption during a write can be reduced significantly.
The MR45V200A can be used in various applications, because the device is guaranteed for the write/read
tolerance of 10¹² cycles per bit and the rewrite count can be extended significantly.
FEATURES
• 262,144-word  8-bit configuration (Serial Peripheral Interface : SPI)
• A single 2.7V to 3.6V power supply
• Operating frequency:
• Read/write tolerance
34MHz
10¹² cycles/bit
• Data retention
10 years
• Guaranteed operating temperature range
40 to 85C (Extended temperature version)
• Package options:
8-pin plastic DIP
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