MR44V064B Datasheet, PDF (1/16 Pages) LAPIS Semiconductor Co., Ltd. – 64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C

MR44V064B
64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C
FEDR44V064B-01
Issue Date: Jan. 08, 2016
GENERAL DESCRIPTION
The MR44V064B is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed
in the ferroelectric process and silicon-gate CMOS technology. The MR44V064B is accessed using Two-wire
Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup
required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks,
such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and
the power consumption during a write can be reduced significantly.
The MR44V064B can be used in various applications, because the device is guaranteed for the write/read
tolerance of 10¹² cycles per bit and the rewrite count can be extended significantly.
FEATURES
• 8,192-word × 8-bit configuration I2C BUS Interface
• A single 3.3 V typ (1.8V to 3.6V) power supply
• Operating frequency:
3.4MHz(Max) HS-mode
• Read/write tolerance
1MHz(Max) F/S-mode Plus
10¹² cycles/bit
• Data retention
10 years
• Guaranteed operating temperature range
−40 to 85°C (Extended temperature version)
• Package options:
8-pin plastic SOP (P-SOP8-200-1.27-T2K)
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