ML13145 Datasheet, PDF (1/17 Pages) LANSDALE Semiconductor Inc. – UHF Wideband Receiver Subsystem (LNA, Mixer, VCO, Prescaler, IF Subsystem, Coiless Detector)

ML13145
UHF Wideband Receiver Subsystem
(LNA, Mixer, VCO, Prescaler, IF
Subsystem, Coiless Detector)
LOW POWER INTEGRATED RECEIVER FOR ISM BAND APPLICATIONS
SEMICONDUCTOR TECHNICAL DATA
Legacy Device: Motorola MC13145
The ML13145 is a dual conversion integrated RF receiver intended for ISM
band applications. It features a Low Noise Amplifier (LNA), two 50 Ω linear
Mixers with linearity control, Voltage Controlled Oscillator (VCO), second
LO amplifier, divide by 64/65 dual modulus Prescalar, split IF Amplifier and
Limiter, RSSI output, Coilless FM/FSK Demodulator and power down con-
trol. Together with the transmit chip (ML13146) and the baseband chip
(MC33410 or MC33411A/B), a complete 900 MHz cordless phone system
can be implemented. This device may be used in applications up to 1.8 GHz,
and operating temperature TA = –20° to +70°C.
48
1
LQFP 48 = -9P
PLASTIC PACKAGE
CASE 932
• Low (<1.8 dB @ 900 MHz) Noise Figure LNA with 14 dB Gain
• Externally Programmable Mixer linearity: IIP3 = 10(nom.) to 17 dBm
(Mixer1); IIP3 = 10 (nom.) to 17 dBm (Mixer2)
CROSS REFERENCE/ORDERING INFORMATION
PACKAGE
MOTOROLA
LANSDALE
LQFP 48
MC13145FTA ML13145-9P
• 50 Ω Mixer Input Impedance and Open Collector Output (Mixer 1 and
Mixer 2); 50 Ω Second LO (LO2) Input Impedance
• Low Power 64/65 Dual Modulus Prescalar (ML12054A type)
• Split IF for Improved Filtering and Extended RSSI Range
Note: Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from ML to MLE.
• Internal 330 Ω Terminations for 10.7 MHz Filters
• Linear Coilless FM/FSK Demodulator with Externally Programmable Bandwidth,
Center Frequency and Audio level
•2.7 to 6.5 V Operation, Low Current Drain (<27 mA, Typ @ 3.6 V) with Power Down
Mode (<10 µA, Typ)
•2.4 GHz RF, 1.0 GHz IF1 and 50 MHz IF2 Bandwidth
PIN CONNECTIONS AND FUNCTIONAL BLOCK DIAGRAM
12 11 10 9 8 7 6 5 4 3 2 1
VEE 13
LNA In 14
VEE 15 _LNA
VEE 16
RF
LNA Out 17
/64, 65
Demod
Lim
48 VEE
47 BWadj
46 Lim Dec2
45 Lim Dec1
44 Lim In
VEE 18
Mxr1In 19
Lin Adj1 20
43 VCC
42 VCC
41 IF Out
Enable 21
IF
40 IF Dec2
oscC 22
39 IF Dec1
LO
oscE 23
38 IF In
oscB 24
37 VEE
IF2
25 26 27 28 29 30 31 32 33 34 35 36
ESD Sensitive —
Handle with Care
IF1
This device contains
626 active transistors.
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