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LBC807-16WT1G_15 Datasheet, PDF (1/3 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16WT1G
S-LBC807-16WT1G
3
DEVICE MARKING AND ORDERING INFORMATION
1
2
Device
LBC807-16WT1G
S-LBC807-16WT1G
LBC807-16WT3G
S-LBC807-16WT3G
Marking
5A
5A
Shipping
3000/Tape&Reel
10000/Tape&Reel
SC-70
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
V CEO
CollectorâBase Voltage
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
Value
â45
â50
â5.0
â500
Unit
V
V
V
mAdc
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , Tstg
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
150
1.2
833
200
1.6
625
â55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Rev.O 1/3
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