|
LBC807-16LT1G_15 Datasheet, PDF (1/10 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors | |||
|
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-16LT1G
S-LBC807-16LT1G
LBC807-16LT3G
S-LBC807-16LT3G
LBC807-25LT1G
S-LBC807-25LT1G
LBC807-25LT3G
S-LBC807-25LT3G
LBC807-40LT1G
S-LBC807-40LT1G
LBC807-40LT3G
S-LBC807-40LT3G
Marking
5A1
5A1
5B1
5B1
5C1
5C1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
3
1
2
SOTâ23
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
V CEO
CollectorâBase Voltage
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
Value
â45
â50
â5.0
â500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
â55 to +150
mW
mW/°C
°C/W
°C
Rev.O 1/10
|
▷ |