L2SC4617RT1G_15 Datasheet, PDF (1/4 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
L2SC4617QT1G
Series
S-L2SC4617QT1G
Series
Device
L2SC4617QT1G
S-L2SC4617QT1G
L2SC4617QT3G
S-L2SC4617QT3G
L2SC4617RT1G
S-L2SC4617RT1G
L2SC4617RT3G
S-L2SC4617RT3G
L2SC4617ST1G
S-L2SC4617ST1G
L2SC4617ST3G
S-L2SC4617ST3G
Marking
BQ
BQ
BR
BR
BS
BS
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
Symbol
Limits
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
0.15
A
SC-89
COLLECTOR
3
1
BASE
2
EMITTER
Collector power
dissipation
PC
0.15
W
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
−55~+150
˚C
!^{Electrical characteristics (Ta=25}°^C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 7
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
180
2.0
Max.
−
−
−
0.1
0.1
0.5
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1 mA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
!Device marking
(S-)L2SC4617QT1G=BQ (S-) L2SC4617RT1G=BR (S-) L2SC4617ST1G=BS
!hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
Rev.O 1/4