L2SC4083PT1G_15 Datasheet, PDF (1/2 Pages) LANSDALE Semiconductor Inc. – High-Frequency Amplifier Transistor

LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z We declare that the material of product compliance with RoHS requirements.
z ^{S- Prefix for Automotive and Other Applications Requiring Unique Site}
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC4083NT1G
Series
S-L2SC4083NT1G
Series
Ordering Information
Device
L2SC4083NT1G
S-L2SC4083NT1G
L2SC4083NT3G
S-L2SC4083NT3G
L2SC4083PT1G
S-L2SC4083PT1G
L2SC4083PT3G
S-L2SC4083PT3G
L2SC4083QT1G
S-L2SC4083QT1G
L2SC4083QT3G
S-L2SC4083QT3G
Marking
N01
N01
H01
H01
P01
P01
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
SC-74
Absolute maximum ratings (Ta=25 ^oC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
V_CBO
20
V
V_CEO
11
V
V_EBO
3
V
I_C
50
mA
P_C
0.2
W
Tj
150
o_C
T_stg
- 55~+150 ^oC
See Table
Electrical characteristics (Ta=25 ^oC)
Parameter
Symbol
Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
BVCBO
20
BVCEO
11
BVEBO
3
ICBO
IEBO
VCE(sat)
hFE
56
fT
1.4
Cob
rbb'·Cc
NF
Typ.
3.2
0.8
4
3.5
Max.
0.5
0.5
0.5
270
1.5
12
Unit
V
V
V
uA
uA
V
GHz
pF
ps
dB
Conditions
IC = 10 µA
IC = 1mA
IE = 10 µA
VCB = 10V
VEB = 2V
IC/IB = 10mA/5mA
VCE/IC = 10V/5mA
VCB = 10V , IC = 10mA , f = 500MHz
VCB = 10V , IE = 0A , f = 1MHz
VCB = 10V , IC = 10mA , f = 31.8MHz
VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω
CLASSIFICATION OF h_FE
Rank
N
Range
56-120
P
82-180
Q
120-270
Rev.O 1/2