L2SC2412KSMT1G_15 Datasheet, PDF (1/4 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SC2412KQMT1G
S-L2SC2412KQMT1G
L2SC2412KQMT3G
S-L2SC2412KQMT3G
L2SC2412KRMT1G
S-L2SC2412KRMT1G
L2SC2412KRMT3G
S-L2SC2412KRMT3G
L2SC2412KSMT1G
S-L2SC2412KSMT1G
L2SC2412KSMT3G
S-L2SC2412KSMT3G
MAXIMUM RATINGS
Marking
BQ
BQ
BR
BR
G1F
G1F
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V EBO
7.0
V
Collector Current — Continuous I _C
Collector power dissipation
P_C
Junction temperature
T_j
150
mAdc
0.2
W
150
°C
Storage temperature
T _stg -55 ~+150 °C
DEVICE MARKING
L2SC2412KQMT1G
Series
S-L2SC2412KQMT1G
Series
SC-74
6
5
4
C
B
E
E
B
C
1
2
3
L2SC2412KQMT1G =BQ L2SC2412KRMT1G =BR L2SC2412KSMT1G =G1F
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I_C = 1 mA)
Emitter–Base Breakdown Voltage
(I_E = 50 µA)
Collector–Base Breakdown Voltage
(I_C = 50 µA)
Collector Cutoff Current
(V_CB = 60 V)
Emitter cutoff current
(V_EB = 7 V)
Collector-emitter saturation voltage
(I_C/ I_B = 50 mA / 5m A)
DC current transfer ratio
(V _CE = 6 V, I _C= 1mA)
Transition frequency
(V _CE = 12 V, I _E= – 2mA, f =30MHz )
Output capacitance
(V _CB = 12 V, I _E= 0A, f =1MHz )
Symbol
V _(BR)CEO
V _(BR)EBO
V _(BR)CBO
I _CBO
I _EBO
V _CE(sat)
h _FE
f_T
C _ob
Min
50
7
60
—
—
—
120
—
—
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
0.1
µA
—
0.1
µA
—
0.4
V
––
560
––
180
––
MHz
2.0
3.5
pF
h _FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
Rev.O 1/4