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L2SA1365FLT1G_15 Datasheet, PDF (1/3 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistor | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor,
designed with high collector current and small VCE(sat).
.
FEATURE
âSmall collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
âExcellent linearity of DC forward current gain.
âSuper mini package for easy mounting
âHigh collector current ICM=-1A
âHigh gain band width product fT =180MHz typ
âWe declare that the material of product compliance with RoHS requirements.
âWe declare that the material of product is ROHS compliant
âS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
L2SA1365*LT1G
S-L2SA1365*LT1G
3
1
2
SOTâ23
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGSï¼Ta=25âï¼
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
-25
V
VCEO Collector to Emitter voltage
-20
V
VEBO
Emitter to Base voltage
-4
V
IO
Collector current
-7 00
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
ï¼125
â
Tstg
Storage temperature
-55ï½ï¼125 â
3
COLLECTOR
1
BASE
ORDERING INFORMATION
2
EMITTER
Device
Marking
L2SA1365ELT1G
AE
S-L2SA1365ELT1G
L2SA1365ELT3G
AE
S-L2SA1365ELT3G
L2SA1365FLT1G
AF
S-L2SA1365FLT1G
L2SA1365FLT3G
AF
S-L2SA1365FLT3G
L2SA1365GLT1G
AG
S-L2SA1365GLT1G
L2SA1365GLT3G
AG
S-L2SA1365GLT3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Symbol
Test conditions
V(BR)CBO I C=-10μA , I E =0
V(BR)EBO I E=-10μA , I C =0
V(BR)CEO I C=-100μA ,R BE=â
ICBO
V CB=-25V, I E=0mA
IEBO
V EB=-2V, I C=0mA
hFE
V CE=-4V, I C=-100mA
â»
VCE(sat) I C=-500mA ,IB=-25mA
fT
V CE=-6V, I E=10mA
â»ï¼ It shows hFE classification in below table.
Item
ï¼¥
F
G
ï½ï¼¦ï¼¥ Item
150ï½300 250ï½500 400ï½800
Limits
Min Typ
-25
-
-4
-
-20
-
-
-
-
-
150
-
-
-0.2
-
180
Unit
Max
-
V
-
V
-
V
-1
μA
-1
μA
800
-0.5
V
-
MHz
Rev.O 1/3
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