L2SA1036KRLT1G_15 Datasheet, PDF (1/4 Pages) LANSDALE Semiconductor Inc. – Medium Power Transistor

LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
(*32V, *0.5A)
L2SA1036KQLT1G Series
L2SA1036KQLT1G Series
FFeatures
S-L2SA1036KQLT1G Series
1) Large IC.
ICMax. = *500mA
2) Low VCE(sat). Ideal for low-voltage
3
operation.
3) _{We declare that the material of product}
compliance with RoHS requirements.
4) _{S- Prefix for Automotive and Other Applications Requiring Unique Site}
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
2
SOT– 23
FStructure
Epitaxial planar type
PNP silicon transistor
3
FDEVICE MARKING
1) L2SA1036KQLT1G=HQ
S-L2SA1036KQLT1G=HQ
2) L2SA1036KRLT1G=HR
S-L2SA1036KRLT1G=HR
1
2
PNP
FAbsolute maximum ratings (Ta = 25_C)
FORDERING INFORMATION
Device
L2SA1036K*LT1G
L2SA1036K*LT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
Rev.O 1/4