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OD50W Datasheet, PDF (1/2 Pages) OptoDiode Corp – SUPER HIGH-POWER GaAlAs IR EMITTERS
SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-50W
ANODE
GLASS
(CASE)
.012 HIGH
MAX
.157
.169
.018
.357
.362
.100
FEATURES
• Ultra high power output
• Four wire bonds on die corners
• Very uniform optical beam
• Standard 3-lead TO-39 hermetic package
.324 .246
2013 .332 .254
.200
.025
.500
CATHODE
.031
.040
45°
• Chip size .030 x .030 inches
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two cathode
pins must be externally connected together.
RoHS
R ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
E PARAMETERS
B Total Power Output, Po
M Radiant Intensity, Ie
Peak Emission Wavelength, λP
E Spectral Bandwidth at 50%, Δλ
C Half Intensity Beam Angle, θ
Forward Voltage, VF
E Reverse Breakdown Voltage, VR
D Capacitance, C
Rise Time
TEST CONDITIONS
IF = 500mA
IF = 10A
IF = 500mA
IF = 50mA
IF = 500mA
IR = 10μA
VR = 0V
Fall Time
IFE ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
L Continuous Forward Current
Peak Forward Current (10μs, 400Hz)2
F Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
O 1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
D THERMAL PARAMETERS
EN Storage and Operating Temperature Range
MIN
TYP
MAX
UNITS
60
75
1000
mW
60
mW/sr
880
nm
80
nm
110
Deg
1.65
2
Volts
5
30
Volts
90
pF
0.7
μsec
0.7
μsec
1000mW
500mA
10A
5V
260°C
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
145°C/W Typical
75°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com