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SUT485J Datasheet, PDF (2/5 Pages) AUK corp – Epitaxial Planar type NPN Silicon Transistor
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Electrical Characteristics [Tr1, Tr2]
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=6V, IC=2mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
Base-emitter voltage
VBE
VCE=6V, IC=2mA
Transition frequency
fT
VCE=10V, IC=10mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
SUT485J
(Ta=25°C)
Min. Typ. Max. Unit
50
-
-
V
-
-
0.1
μA
-
-
0.1
μA
120
-
400
-
-
-
0.25
V
- 0.65
-
V
-
200
-
MHz
-
2
-
pF
KSD-T5S003-001
2
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