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| SUT394EF Datasheet, PDF (2/6 Pages) AUK corp – Epitaxial planar NPN/PNP silicon transistor | |||
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SUT394EF
Electrical Characteristics [ Tr1 ]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=10μA, IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BVCEO
BVEBO
IC=1mA, IB=0
IE=10μA, IC=0
Collector cut-off current
ICEX
VCE=30V, VEB=3V
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
hFE
VCE(sat)
fT
Cob
td
VCE=1V, IC=10mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0, f=1MHz
Rise time
Storage time
Fall Time
tr
tstg
<
tf
Electrical Characteristics [ Tr2 ]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=-10μA, IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BVCEO
BVEBO
IC=-1mA, IB=0
IE=-10μA, IC=0
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
ICEX
hFE
VCE(sat)
fT
Cob
td
VCE=-30V, VEB=-3V
VCE=-1V, IC=-10mA
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA,
f=100MHz
VCB=-5V, IE=0, f=1MHz
Rise time
tr
Storage time
Fall Time
tstg
<
tf
Min.
60
40
6
-
100
-
Typ.
-
-
-
-
-
-
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
50
nA
300
-
0.3
V
300
-
-
MHz
-
-
4
pF
-
-
35
ns
-
-
35
ns
-
-
200
ns
-
-
50
ns
Min.
-40
-40
-5
-
100
-
Typ.
-
-
-
-
-
-
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
-50
nA
300
-
-0.4
V
250
-
-
MHz
-
-
4.5
pF
-
-
35
ns
-
-
35
ns
-
-
225
ns
-
-
75
ns
KSD-T5U006-001
2
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