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| SUT390EF Datasheet, PDF (2/5 Pages) AUK corp – Epitaxial planar NPN silicon transistor | |||
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Electrical Characteristics [Tr1, Tr2]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=10μA, IE=0
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=10μA, IC=0
Collector cut-off current
ICEX
VCE=30V, VEB=3V
DC current gain
hFE
VCE=1V, IC=10mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC=50mA, IB=5mA
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0, f=1MHz
Delay time
td
Rise time
Storage time
tr
Vcc=10V, Ic=10mA
IB1=-IB2=1mAâ»
tstg
Fall Time
tf
SUT390EF
(Ta=25°C)
Min. Typ. Max. Unit
60
-
-
V
40
-
-
V
6
-
-
V
-
-
50
nA
100
-
300
-
-
-
0.3
V
300
-
-
MHz
-
-
4
pF
-
-
35
ns
-
-
35
ns
-
-
200
ns
-
-
50
ns
â» Switching Time Test Circuit.
<
KSD-T5U005-001
2
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