SUT093N Datasheet, PDF (2/5 Pages) KODENSHI KOREA CORP. – Epitaxial planar NPN silicon transistor

Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
I_CP*
Collector power dissipation
P_C**
Junction temperature
T_J
Storage temperature
T_stg
* : Single pulse, tp= 300 ㎲
** : Total rating(Each terminal mounted on a recommended solder land)
Ratings
100
90
6
0.3
0.6
0.5
150
-55~150
SUT093N
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics(TR1, TR2)
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CBO
BV_CEO
BV_EBO
I_C=100μA, I_E=0
I_C=1 ㎃, I_B=0
I_E=10 ㎂, I_C=0
Collector cut-off current
I_CBO
V_CB=100V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE ¹⁾
V_CE=5V, I_C=10 ㎃
Collector-Emitter saturation voltage
V_CE(sat)(1) ²⁾ I_C=10 ㎃, I_B=1 ㎃
V_CE(sat)(2) ²⁾ I_C=50 ㎃, I_B=5 ㎃
Base-Emitter saturation voltage
V_BE(sat)(1) ²⁾ I_C=10mA, I_B=1mA
V_BE(sat)(2) ²⁾ I_C=50mA, I_B=5mA
Transition frequency
f_T
V_CE=10V, I_C=10 ㎃
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1 ㎒
* Note 1) hFE Rank / A : 80~150, B : 130~250
* Note 2) Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
100
-
-
V
90
-
-
V
6
-
-
V
-
-
0.1
㎂
-
-
0.1
㎂
80
-
250
-
-
-
0.2
V
-
-
0.5
V
-
-
1
V
-
-
100
-
-
4
1
V
400 ㎒
-
㎊
KSD-T5P008-000
2