SUT041N Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Dual NPN Bipolar transistor

Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
I_CP*
Collector power dissipation
P_C**
Junction temperature
T_J
Storage temperature
T_stg
* : Single pulse, tp= 300 ㎲
** : Total rating(Each terminal mounted on a recommended solder land)
SUT041N
Ratings
45
40
5
1
2
0.5
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics(TR1, TR2)
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
BV_CBO I_C=100μA, I_E=0
BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=45V, I_E=0
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
I_EBO
V_EB=5V, I_C=0
h_FE^*
V_CE=1V, I_C=100mA
V_CE(sat) ^* I_C=500mA, I_B=50mA
Transition frequency
f_T
V_CE=5V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* Note 1) hFE Rank : 160~320 only
* Note 2) Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
Min. Typ. Max. Unit
45
-
-
V
40
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
160
-
320
-
-
-
0.5
V
-
150
-
MHz
-
8
-
pF
KSD-T5P009-000
2