STS8550 Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor

STS8550
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
Ratings
-30
-25
-6
-800
800
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter voltage
Transition frequency
Collector output capacitance
BV_CBO
BV_CEO
I_CBO
h_FE*
V_CE(sat)
V_BE
f_T
C_ob
I_C=-500µA, I_E=0
I_C=-1mA, I_B=0
V_CB=-15V, I_E=0
V_CE=-1V, I_C=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-1V, I_C=-500mA
V_CE=-5V, I_C=-10mA
V_CB=-10V, I_E=0, f=1MHz
* : h_FE Rank / B : 85~160, C : 120~200, D : 160~300
Min.
-30
-25
-
85
-
-
-
-
Typ.
-
-
-
-
-
-
120
19
(Ta=25°C)
Max. Unit
-
V
-
V
-50
nA
300
-
-0.5
V
-1.2
V
-
MHz
-
pF
KST-9013-000
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