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STK730F Datasheet, PDF (2/8 Pages) AUK corp – Advanced Power MOSFET
STK730F
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed) *
Drain power dissipation
Avalanche current (Single)
②
Single pulsed avalanche energy ②
Avalanche current (Repetitive) ①
Repetitive avalanche energy
①
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Symbol
VDSS
VGSS
Tc=25℃
ID
Tc=100℃
IDP
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Rating
400
±30
5.5
3.5
22
25
5.5
270
5.5
7.3
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max
5.0
62.5
(Tc=25°C)
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
°C
Unit
℃/W
KSD-T0O002-002
2